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New Analytical Drain Current Model for Graphene Field-Effect Transistors in the Low Carrier Density Limit

Title
New Analytical Drain Current Model for Graphene Field-Effect Transistors in the Low Carrier Density Limit
Authors
김오현이동헌이기환김강민
Date Issued
2013-07-12
Publisher
미래창조과학부
URI
https://oasis.postech.ac.kr/handle/2014.oak/66440
Article Type
Conference
Citation
NANO KOREA 2013 Symposium, 2013-07-12
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김오현KIM, OHYUN
Dept of Electrical Enginrg
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