New Analytical Drain Current Model for Graphene Field-Effect Transistors in the Low Carrier Density Limit
- Title
- New Analytical Drain Current Model for Graphene Field-Effect Transistors in the Low Carrier Density Limit
- Authors
- 김오현; 이동헌; 이기환; 김강민
- Date Issued
- 2013-07-12
- Publisher
- 미래창조과학부
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/66440
- Article Type
- Conference
- Citation
- NANO KOREA 2013 Symposium, 2013-07-12
- Files in This Item:
- There are no files associated with this item.
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