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Effect of TiOx-based tunnel barrier on non-linearity and switching reliability of resistive random access memory
- Title
- Effect of TiOx-based tunnel barrier on non-linearity and switching reliability of resistive random access memory
- Authors
- 황현상
- Date Issued
- 2014-10-28
- Publisher
- 한국반도체연구조합
- Article Type
- Conference
- Citation
- 2014 14th Non-Volatile Memory Technology Symposium (NVMTS 2014), 2014-10-28
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