Interfacial properties of ultra thin HfSiO2 films grown by ALCVD using Hf(N(C2H5)2)4 and Si(OC4H9)4 for CMOS application
- Title
- Interfacial properties of ultra thin HfSiO2 films grown by ALCVD using Hf(N(C2H5)2)4 and Si(OC4H9)4 for CMOS application
- Authors
- 용기중
- Date Issued
- 2005-04-22
- Publisher
- 화학공학회
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/73238
- Article Type
- Conference
- Citation
- 한국화학공학회 2005년 봄 학술대회, 2005-04-22
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.