Behavior of 2.8- and 3.2-eV Photoluminescence Bands in Mg-doped GaN at Different Temperatures and Excitation Densities
- Title
- Behavior of 2.8- and 3.2-eV Photoluminescence Bands in Mg-doped GaN at Different Temperatures and Excitation Densities
- Authors
- 이규철
- Date Issued
- 1998-01-01
- Publisher
- The 9-th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE)
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/82410
- Article Type
- Conference
- Citation
- The 9-th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE), 1998-01-01
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- There are no files associated with this item.
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