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Behavior of 2.8- and 3.2-eV Photoluminescence Bands in Mg-doped GaN at Different Temperatures and Excitation Densities

Title
Behavior of 2.8- and 3.2-eV Photoluminescence Bands in Mg-doped GaN at Different Temperatures and Excitation Densities
Authors
이규철
Date Issued
1998-01-01
Publisher
The 9-th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE)
URI
https://oasis.postech.ac.kr/handle/2014.oak/82410
Article Type
Conference
Citation
The 9-th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE), 1998-01-01
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이규철YI, GYU CHUL
Dept of Materials Science & Enginrg
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