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35 nm T-gate Double Delta Doped In0.52Al0.48As/In0.53Ga0.47As Metamorhpic GaAs HEMTs With an Ultrahigh fmax of 620 GHz

Title
35 nm T-gate Double Delta Doped In0.52Al0.48As/In0.53Ga0.47As Metamorhpic GaAs HEMTs With an Ultrahigh fmax of 620 GHz
Authors
정윤하
Publisher
IEEE
URI
https://oasis.postech.ac.kr/handle/2014.oak/88151
Article Type
Conference
Citation
IEEE Nanotechnology Materials and Devices Conference 2008, page. 143
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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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