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PBTI and HCI Stress-Induces Trap Generation in SiO2/HfO2 Gate Stack NMOSFETs and its impact on Low Frequency Noise
- Title
- PBTI and HCI Stress-Induces Trap Generation in SiO2/HfO2 Gate Stack NMOSFETs and its impact on Low Frequency Noise
- Authors
- 정윤하
- Publisher
- Austin , USA
- Article Type
- Conference
- Citation
- 5th International Symposium on Advanced Gate Stack Technology (ISAGST 2008), page. 7
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg