Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array

Abstract

In this letter, we demonstrated a new type of threshold selector with excellent electrical characteristics for cross-point memory array. The proposed Ag/TiO2-based threshold selector device showed high selectivity (similar to 10(7)) and steep slope (<5 mV/decade). The observed threshold switching in programmable metallization cell device occurred due to the spontaneous rupturing of silver (Ag) filament. The Ag ionization to minimize the steric repulsion between Ag and surrounding TiO2 electrolyte was the main origin of the spontaneous rupture.