Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array
SCIE
SCOPUS
- Title
- Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array
- Authors
- Song, J; Woo, J; Prakash, A; Lee, D; Hwang, H
- Date Issued
- 2015-07
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- In this letter, we demonstrated a new type of threshold selector with excellent electrical characteristics for cross-point memory array. The proposed Ag/TiO2-based threshold selector device showed high selectivity (similar to 10(7)) and steep slope (<5 mV/decade). The observed threshold switching in programmable metallization cell device occurred due to the spontaneous rupturing of silver (Ag) filament. The Ag ionization to minimize the steric repulsion between Ag and surrounding TiO2 electrolyte was the main origin of the spontaneous rupture.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/92372
- DOI
- 10.1109/LED.2015.2430332
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 36, no. 7, page. 681 - 683, 2015-07
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- There are no files associated with this item.
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