DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, KJ | - |
dc.contributor.author | Jang, HW | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2015-06-25T01:09:33Z | - |
dc.date.available | 2015-06-25T01:09:33Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2003-02-24 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000003204 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9455 | - |
dc.description.abstract | The effects of inductively coupled plasma (ICP) etching on electrical properties of n-type GaN Schottky contacts were investigated by observing ion damage using deep-level transient spectroscopy. An electron trap, not previously seen, localized near the contact, as well as a pre-existing trap, was observed in the ICP-etched sample. The ICP-etched surface was found to be N-deficient, which means that N vacancies (V-N) were produced by ICP etching. From these, the origin of the ICP-induced electron trap was suggested to be V-N or a V-N-related complex of point defects. The ICP-induced traps provided a path for the transport of electrons, leading to the reduction of Schottky barrier height and increase of gate leakage current. (C) 2003 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.1557316 | - |
dc.author.google | Choi, KJ | en_US |
dc.author.google | Jang, HW | en_US |
dc.author.google | Lee, JL | en_US |
dc.relation.volume | 82 | en_US |
dc.relation.issue | 8 | en_US |
dc.relation.startpage | 1233 | en_US |
dc.relation.lastpage | 1235 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.82, no.8, pp.1233 - 1235 | - |
dc.identifier.wosid | 000181066000031 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1235 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1233 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 82 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-0037463335 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 44 | - |
dc.description.scptc | 48 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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