Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy
SCIE
SCOPUS
- Title
- Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy
- Authors
- Choi, KJ; Jang, HW; Lee, JL
- Date Issued
- 2003-02-24
- Publisher
- AMER INST PHYSICS
- Abstract
- The effects of inductively coupled plasma (ICP) etching on electrical properties of n-type GaN Schottky contacts were investigated by observing ion damage using deep-level transient spectroscopy. An electron trap, not previously seen, localized near the contact, as well as a pre-existing trap, was observed in the ICP-etched sample. The ICP-etched surface was found to be N-deficient, which means that N vacancies (V-N) were produced by ICP etching. From these, the origin of the ICP-induced electron trap was suggested to be V-N or a V-N-related complex of point defects. The ICP-induced traps provided a path for the transport of electrons, leading to the reduction of Schottky barrier height and increase of gate leakage current. (C) 2003 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9455
- DOI
- 10.1063/1.1557316
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 82, no. 8, page. 1233 - 1235, 2003-02-24
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