DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, YD | - |
dc.contributor.author | Kim, DH | - |
dc.contributor.author | Jang, Y | - |
dc.contributor.author | Hwang, M | - |
dc.contributor.author | Lim, JA | - |
dc.contributor.author | Cho, K | - |
dc.date.accessioned | 2015-06-25T01:11:41Z | - |
dc.date.available | 2015-06-25T01:11:41Z | - |
dc.date.created | 2009-08-25 | - |
dc.date.issued | 2005-12-12 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000005563 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9488 | - |
dc.description.abstract | By a simple process, we manufactured polymer thin-film transistors (PTFTs) using a 2.6 nm thick self-assembled monolayer (SAM) of alkyl chains as the gate dielectric to reduce the operating voltage of the device. These manufactured PTFTs operate with supply voltages of less than 2 V. A densely packed SAM of docosyltrichlorosilanes (DCTS) was a very efficient insulating barrier due to the very limited penetration of polymer transistor molecules into the SAM insulator. The present results show that a DCTS monolayer is suitable for use as a gate dielectric. These results enhance the prospects of using polymer TFTs with a SAM gate dielectric in low-power applications such as identification tags. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Low-voltage polymer thin-film transistors with a self-assembled monolayer as the gate dielectric | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1063/1.2143113 | - |
dc.author.google | Park, YD | en_US |
dc.author.google | Kim, DH | en_US |
dc.author.google | Cho, K | en_US |
dc.author.google | Lim, JA | en_US |
dc.author.google | Hwang, M | en_US |
dc.author.google | Jang, Y | en_US |
dc.relation.volume | 87 | en_US |
dc.relation.issue | 24 | en_US |
dc.contributor.id | 10077904 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.87, no.24 | - |
dc.identifier.wosid | 000233825900099 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 24 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 87 | - |
dc.contributor.affiliatedAuthor | Cho, K | - |
dc.identifier.scopusid | 2-s2.0-28844446654 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 59 | - |
dc.description.scptc | 70 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTOR | - |
dc.subject.keywordPlus | ORGANIC TRANSISTORS | - |
dc.subject.keywordPlus | POLY(3-HEXYLTHIOPHENE) | - |
dc.subject.keywordPlus | INSULATORS | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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