Low-voltage polymer thin-film transistors with a self-assembled monolayer as the gate dielectric
SCIE
SCOPUS
- Title
- Low-voltage polymer thin-film transistors with a self-assembled monolayer as the gate dielectric
- Authors
- Park, YD; Kim, DH; Jang, Y; Hwang, M; Lim, JA; Cho, K
- Date Issued
- 2005-12-12
- Publisher
- AMER INST PHYSICS
- Abstract
- By a simple process, we manufactured polymer thin-film transistors (PTFTs) using a 2.6 nm thick self-assembled monolayer (SAM) of alkyl chains as the gate dielectric to reduce the operating voltage of the device. These manufactured PTFTs operate with supply voltages of less than 2 V. A densely packed SAM of docosyltrichlorosilanes (DCTS) was a very efficient insulating barrier due to the very limited penetration of polymer transistor molecules into the SAM insulator. The present results show that a DCTS monolayer is suitable for use as a gate dielectric. These results enhance the prospects of using polymer TFTs with a SAM gate dielectric in low-power applications such as identification tags.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9488
- DOI
- 10.1063/1.2143113
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 87, no. 24, 2005-12-12
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