Epitaxial VO2 thin-film-based radio-frequency switches with electrical activation
SCIE
SCOPUS
- Title
- Epitaxial VO2 thin-film-based radio-frequency switches with electrical activation
- Authors
- LEE, JAESEONG; LEE, DAESU; Cho, S. J.; Seo, J.-H.; Liu, D.; Eom, C.-B.; Ma, Z.
- Date Issued
- 2017-09
- Publisher
- JAPAN SOC APPLIED PHYSICS
- Abstract
- Vanadium dioxide (VO2) is a correlated material exhibiting a sharp insulator-to-metal phase transition (IMT) caused by temperature change and/or bias voltage. We report on the demonstration of electrically triggered radio-frequency (RF) switches based on epitaxial VO2 thin films. The highly epitaxial VO2 and SnO2 template layer was grown on a (001) TiO2 substrate by pulsed laser deposition (PLD). A resistance change of the VO2 thin films of four orders of magnitude was achieved with a relatively low threshold voltage, as low as 13V, for an IMT phase transition. VO2 RF switches also showed high-frequency responses of insertion losses of -3 dB at the on-state and return losses of -4.3 dB at the off-state over 27GHz. Furthermore, an intrinsic cutoff frequency of 17.4 THz was estimated for the RF switches. The study on electrical IMT dynamics revealed a phase transition time of 840 ns. (C) 2017 The Japan Society of Applied Physics
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/95010
- DOI
- 10.7567/APEX.10.091101
- ISSN
- 1882-0778
- Article Type
- Article
- Citation
- Applied Physics Express, vol. 10, no. 9, 2017-09
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- There are no files associated with this item.
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