Epitaxial VO2 thin film-based radio-frequency switches with thermal activation
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SCOPUS
- Title
- Epitaxial VO2 thin film-based radio-frequency switches with thermal activation
- Authors
- LEE, JAESEONG; LEE, DAESU; Cho, S. J.; Seo, J.-H.; Liu, D.; Eom, C.-B.; Ma, Z.
- Date Issued
- 2017-08-07
- Publisher
- AMER INST PHYSICS
- Abstract
- In this paper, we report on the demonstration of thermally triggered "normally ON" radio-frequency (RF) switches based on epitaxial vanadium dioxide (VO2) thin films with a SnO2 template on (001) TiO2 substrates. Fast insulator-to-metal phase transition of the epitaxial VO2 at a relatively low temperature allowed RF switches made of the VO2 to exhibit sharp changes in the RF insertion loss during cooling and heating at 60 degrees C and 66 degrees C, respectively. The change of RF insertion loss due to phase transition is greater than 15 dB. The VO2 RF switches also completed the transition of S-21 within less than 3 degrees C and showed a low-loss operation frequency of up to 24.2 GHz with a low insertion loss of -1.36 dB and isolation of 17.56 dB at 12.03 GHz, respectively. The demonstration suggests that epitaxial VO2-based RF switches can be used in switching elements up to Ku-band RF circuits. Published by AIP Publishing.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/95011
- DOI
- 10.1063/1.4998452
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 111, no. 6, 2017-08-07
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- There are no files associated with this item.
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