Bipolar switching characteristics of nonvolatile memory devices based on poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) thin film

Abstract

This letter describes the fabrication and electric characteristics of nonvolatile memory devices from a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin film sandwiched between Al and indium tin oxide electrodes. These devices have bipolar switching characteristics. The on and off voltages are 0.67 and -1.65 V, respectively. The on/off current ratio of the device is up to 10(3). These characteristics were caused by the formation and destruction of current paths by the reduction and oxidation of PEDOT chains in a PEDOT:PSS thin film. Also, the write-read-erase-read cycle test was operated over 10(4) times and the retention time was up to 16 h. (C) 2008 American Institute of Physics.