Molecular n-type doping for air-stable electron transport in vacuum-processed n-channel organic transistors
SCIE
SCOPUS
- Title
- Molecular n-type doping for air-stable electron transport in vacuum-processed n-channel organic transistors
- Authors
- Oh, JH; Peng Wei; Zhenan Bao
- Date Issued
- 2010-12-13
- Publisher
- AIP Publishing LLC
- Abstract
- The effects of n-type doping on the air-stability of vacuum-processed n-channel organic transistors have been investigated using perylene diimides and pyronin B as the active layer and dopant, respectively. Systematic studies on the influence of doping location revealed the n-type doping of bulk active layer or channel region significantly improves air-stability by compensating for the trapped electrons with the donated mobile electrons. Although n-type doping at the electrode contact could readily turn on the devices, it could not confer air-stable electron transport. The described approach would open up opportunities to enable and improve the stability of n-channel organic transistors in air. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3527972]
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9689
- DOI
- 10.1063/1.3527972
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 97, no. 24, page. 243305, 2010-12-13
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.