DC Field | Value | Language |
---|---|---|
dc.contributor.author | Maeng, WJ | - |
dc.contributor.author | Kim, WH | - |
dc.contributor.author | Koo, JH | - |
dc.contributor.author | Lim, SJ | - |
dc.contributor.author | Lee, CS | - |
dc.contributor.author | Lee, T | - |
dc.contributor.author | Kim, H | - |
dc.date.accessioned | 2015-06-25T01:25:59Z | - |
dc.date.available | 2015-06-25T01:25:59Z | - |
dc.date.created | 2010-04-23 | - |
dc.date.issued | 2010-02-22 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000020644 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9711 | - |
dc.description.abstract | Titanium oxide (TiO2) layer was used to control the flatband voltage (V-FB) of p-type metal-oxide-semiconductor field effect transistors. TiO2 was deposited by plasma enhanced atomic layer deposition (PE-ALD) on hafnium oxide (HfO2) gate dielectrics. Comparative studies between TiO2 and Al2O3 as capping layer have shown that improved device properties with lower capacitance equivalent thickness (CET), interface state density (D-it), and flatband voltage (V-FB) shift were achieved by PE-ALD TiO2 capping layer. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.3330929 | - |
dc.author.google | Maeng, W. J. | en_US |
dc.author.google | Kim, Woo-Hee | en_US |
dc.author.google | Kim, Hyungjun | en_US |
dc.author.google | Lee, Taeyoon | en_US |
dc.author.google | Lee, Chang-Soo | en_US |
dc.author.google | Lim, S. J. | en_US |
dc.author.google | Koo, Ja Hoon | en_US |
dc.relation.volume | 96 | en_US |
dc.relation.issue | 8 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.96, no.8 | - |
dc.identifier.wosid | 000275027200065 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 8 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 96 | - |
dc.contributor.affiliatedAuthor | Kim, H | - |
dc.identifier.scopusid | 2-s2.0-77749297935 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 12 | - |
dc.description.scptc | 10 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | dielectric materials | - |
dc.subject.keywordAuthor | hafnium compounds | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordAuthor | titanium compounds | - |
dc.subject.keywordAuthor | voltage control | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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