Effect of oxidizing the ferromagnetic electrode in magnetic tunnel junctions on tunneling magnetoresistance
SCIE
SCOPUS
- Title
- Effect of oxidizing the ferromagnetic electrode in magnetic tunnel junctions on tunneling magnetoresistance
- Authors
- Joo, S; Jung, KY; Lee, BC; Kim, TS; Shin, KH; Jung, MH; Rho, KJ; Park, JH; Hong, J; Rhie, K
- Date Issued
- 2012-04-23
- Publisher
- AMER PHYSICAL SOC
- Abstract
- The ferromagnetic layer in magnetic tunnel junctions (MTJs) was oxidized with varying O-2 concentrations, and the corresponding effect on spin-dependent transport was studied. As expected from our previous results for MTJs with an over-oxidized AlOx tunnel barrier, a partially oxidized ferromagnetic layer plays an important role in spin-dependent transport. As the temperature is lowered, the junction resistance increases dramatically, and the tunneling magnetoresistance (TMR) is strongly suppressed. Increasing the O-2 concentration enhances the increase of resistance and suppression of TMR. This work supports our previous conclusion that oxidizing the ferromagnetic layer generates localized magnetic moments, which act as a scattering center for spin-polarized tunneling electrons. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704557]
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9757
- DOI
- 10.1063/1.4704557
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 100, no. 17, page. 172406, 2012-04-23
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