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Growth of germanium nanowires using liquid GeCl4 as a precursor: the critical role of Si impurities SCIE SCOPUS
- Title
- Growth of germanium nanowires using liquid GeCl4 as a precursor: the critical role of Si impurities
- Date Issued
- 2009-09
- Publisher
- ROYAL SOC CHEMISTRY
- Abstract
- Liquid GeCl4 precursors have been employed to grow into one dimensional Ge nanowires (NWs) via a vapor-liquid-solid (VLS) process, in which Si, supplied as a form of liquid SiCl4, plays a critical role for the successful formation of Ge NWs.
- ISSN
- 1359-7345
- Article Type
- Article
- Citation
- CHEMICAL COMMUNICATIONS, no. 34, page. 5124 - 5126, 2009-09
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Related Researcher
- 최희철CHOI, HEE CHEUL
- Dept of Chemistry