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KANG, BONG KOO(강봉구)

Department: Dept of Electrical Engineering(전자전기공학과)

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Publication & Time Cited Count (For the Last 5 years)

Results 1-6 of 6 (Search time: 0.002 seconds).

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Subject : SILICON

Article

Characterization of positive bias temperature instability concerning interfacial layer thickness of HfSiON/SiO2 nMOSFETSCIESCOPUS

MICROELECTRONICS RELIABILITY, vol. 100-101, 2019-09

Article

Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instabilitySCIESCOPUS

MICROELECTRONICS RELIABILITY, vol. 88-90, page. 191 - 195, 2018-09

Article

Method of estimating mechanical stress on Si body of MOSFET using drain-body junction currentSCIESCOPUS

Japanese Journal of Applied Physics, vol. 56, no. 1, 2016-11

Article

Time-dependent degradation due to negative bias temperature instability of p-MOSFET with an ultra-thin SiON gate dielectricSCIESCOPUS

MICROELECTRONIC ENGINEERING, vol. 83, no. 3, page. 520 - 527, 2006-03

Article

Plasma process induced damages on n-MOSFET with plasma oxidized and nitrided gate dielectricsSCIESCOPUS

MICROELECTRONIC ENGINEERING, vol. 75, no. 4, page. 443 - 452, 2004-11

Article

Size and interface state dependence of the luminescence properties in Si nanocrystalsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 42, no. 4B, page. 2382 - 2386, 2003-04

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