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KANG, BONG KOO(강봉구)

Department: Dept of Electrical Engineering(전자전기공학과)

Major(s): -

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Publication & Time Cited Count (For the Last 5 years)

Results 1-20 of 79 (Search time: 0.002 seconds).

Conference

Channel-length dependence of the generation of interface states and oxide-trapped charges on drain avalanche hot carrier degradation of HfSiON/SiO2 p-channel MOSFETs with strained Si/SiGe channel

IWDTF 2019, 2019-11-19

Conference

Analysis of Positive Bias Temperature Instability Degradation in n+ and p+ poly-Si Gates of High-Voltage SiO2 Dielectric nMOSFETs

IWDTF 2019, 2019-11-19

Conference

Characterization of fast relaxation by oxide-trapped charges under BTI stress on 64-nm HfSiON/SiO2 MOFSETs

IWDTF 2019, 2019-11-19

Conference

High Efficiency DC-DC Buck Converter with a Passive Snubber Circuit

EDPE 2019, 2019-09-24

Conference

Channel-length dependence of mechanical stress effect by hybrid shallow trench isolation on NBTI degradation of HfSiON/SiO2 p-channel MOSFETs with strained Si/SiGe channel

ESRF2019, 2019-09-24

Conference

Characterization of Positive Bias Temperature Instability Concerning Interfacial Layer Thickness of HfSiON/SiO2 nMOSFET

ESRF2019, 2019-09-24

Conference

Effect of oxide-trapped charge on the anomalous drain avalanche hot carrier degradation of a SiO2 dielectric nMOSFET

ESRF2019, 2019-09-24

Conference

Effect of HfSiON thickness on electron trap distributions of HfSiON/SiO2 nMOSFET under PBTI

ESRF2019, 2019-09-24

Conference

Systematic analysis of electron traps of HfSiON/SiO2 nMOSFETs using TSCIS

2019 International Conference on Solid State Devices and Materials, 2019-09-02

Conference

Active Charge Equalizer of Battery Cells Using Double Energy Carriers

INTERNATIONAL CONFERENCE On RENEWABLE ENERGY(ICREN 2019), 2019-04-25

Conference

Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instability

European Symposium on Reliability of Electron Devices,Failure Physics and Analysis, 2018-10-02

Conference

Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress

the 29th European Symposium on Reliability of Electron Devices, 2018-10-02

Conference

Channel with dependence of AC stress on bulk nMOSFETs

ESREF 2016(the 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2016-09-21

Conference

Length dependency expectation of negative bias temperature instability

International Workshop on Dielectric thin films for future electron devices(IWDTF), 2015-11-02

Conference

Voltage equalizer for li-ion battery sting using LC series resonance

IECON(Industrial Electronic Society), 2013-11-10

Conference

Saturation Effect for Vth Shift durng the Positive Bias Temperature Instability of HfSiON/SiO2 nMOSFET and Its Impact on Device Life time

International Workshop on DIELETRIC THIN FILMS FOR FUTURE ELECTRON DEVICES, 2013-11-07

Conference

Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs

European Symposium on Reliability of Electron Devices,Failure Physics and Analysis, 2013-09-30

Conference

Effect of dynamic stress on OFF leakage of small-dimension pMOSFETs at high temperature

SSDM(International Conference on Solid State Devices and Materials), 2013-09-23

Conference

Improvement of power-conversion efficiency at light-load using a variable-duty burst mode

Power and Energy Conference at Illinois, 2013-02-22

Conference

Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress

European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2012-10-01

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