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LEE, JONG LAM(이종람) researcherid scopus

Department: Dept of Materials Science & Engineering(신소재공학과)

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Publication & Time Cited Count (For the Last 5 years)

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Date Issued : [1990 TO 1999]

Article

Pt ohmic contact to p-type GaN with contact resistivity of 10(-4) Omega center dot cm(2) using surface treatmentSCIESCOPUS

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 35, page. S1063 - S1066, 1999-12

Article

Reduction of ohmic contact resistivity on p-type GaN by surface treatmentSCIESCOPUS

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, vol. 176, no. 1, page. 763 - 766, 1999-11-16

Article

Effect of An overlayer on Ni contacts to p-type GaNSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 17, no. 6, page. 2675 - 2678, 1999-11

Article

Low transparent Pt ohmic contact on p-type GaN by surface treatment using aqua regiaSCIESCOPUS

ELECTRONICS LETTERS, vol. 35, no. 19, page. 1676 - 1678, 1999-09-16

Article

Effects of deep levels on transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistorSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 75, no. 11, page. 1580 - 1582, 1999-09-13

Article

Application of nonalloyed PdGe ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistorSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 74, no. 19, page. 2866 - 2868, 1999-05-10

Article

Au/Ge-based Ohmic contact to an AlGaAs InGaAs pseudomorphic high electron mobility transistor with an undoped cap layerSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 17, no. 3, page. 1034 - 1039, 1999-05

Article

Ohmic contact formation mechanism of nonalloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopySCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 74, no. 16, page. 2289 - 2291, 1999-04-19

Article

Effect of surface treatment by (NH4)(2)S-x solution on the reduction of ohmic contact resistivity of p-type GaNSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 17, no. 2, page. 497 - 499, 1999-03

Article

Determination of energy levels of surface states in GaAs metal-semiconductor field-effect transistor using deep-level transient spectroscopySCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 74, no. 8, page. 1108 - 1110, 1999-02-22

Article

Effect of surface treatment by KOH solution on ohmic contact formation of p-type GaNSCIESCOPUS

SOLID-STATE ELECTRONICS, vol. 43, no. 2, page. 435 - 438, 1999-02

Article

Sulfur doping of GaAs with (NH4)(2)S-x solutionSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 85, no. 2, page. 807 - 811, 1999-01-15

Lee, JL

Article

Improved uniformity of contact resistance in GaAs MESFET using Pd/Ge/Ti/Au ohmic contactsSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 19, no. 12, page. 481 - 483, 1998-12

Article

Evidence on the formation of a heavily Ge-doped layer in Pd/Ge-based ohmic contact to pseudomorphic high electron mobility transistorSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 73, no. 22, page. 3247 - 3249, 1998-11-30

Article

Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatmentSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 73, no. 20, page. 2953 - 2955, 1998-11-16

Article

Interpretation of transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor by capacitance deep level transient spectroscopySCIESCOPUS

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 33, page. S366 - S369, 1998-11

Article

A new self-aligned and T-shaped gate technology for GaAs power mesfetsSCIESCOPUS

SOLID-STATE ELECTRONICS, vol. 42, no. 11, page. 2063 - 2068, 1998-11

Article

Selective wet etching of GaAs on AlxGa1-xAs for AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistorSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 84, no. 7, page. 3933 - 3938, 1998-10-01

Article

Microstructural evidence on direct contact of Au/Ge/Ni/Au ohmic metals to InGaAs channel in pseudomorphic high electron mobility transistor with undoped cap layerSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 73, no. 12, page. 1670 - 1672, 1998-09-21

Article

Contact resistance degradation of Pd/Ge ohmic contact on pseudomorphic high electron mobility transistorSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 16, no. 5, page. 2725 - 2728, 1998-09

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