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JEONG, YOON HA(정윤하)

Department: Dept of Electrical Engineering(전자전기공학과)

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Publication & Time Cited Count (For the Last 5 years)

Results 1-9 of 9 (Search time: 0.002 seconds).

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Date Issued : [2010 TO 2016] Date Issued : 2015

Article

1/f Noise Characteristics of AlGaN/GaN FinFETs with and without TMAH surface treatmentSCIESCOPUS

MICROELECTRONIC ENGINEERING, vol. 147, page. 134 - 136, 2015-11-01

Article

Investigation of RC Parasitics Considering Middle-of-the-Line in Si-Bulk FinFETs for Sub-14-nm Node Logic ApplicationsSCIESCOPUS

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 62, no. 10, page. 3441 - 3444, 2015-10

Article

Junction Design Strategy for Si Bulk FinFETs for System-on-Chip Applications Down to the 7-nm NodeSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 36, no. 10, page. 994 - 996, 2015-10

Article

Optimization of Conductance Change in Pr1-xCaxMnO3-Based Synaptic Devices for Neuromorphic SystemsSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 36, no. 5, page. 457 - 459, 2015-05

Article

Extraction of source/drain resistivity parameters optimized for double-gate FinFETsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 54, no. 4, 2015-04

Article

Impact of Spacer Dielectric Constant on Parasitic RC and Design Guidelines to Optimize DC/AC Performance in 10 nm Node Si-Nanowire FETsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 54, no. 4, page. 4DN08-1 - 4DN08-5, 2015-04

Article

Physical DC and Thermal Noise Models of 18 nm Double-Gate Junctionless pMOSFETs for Low Noise RF ApplicationsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 54, no. 4, page. 4DC08-1 - 4DC08-6, 2015-04

Article

Statistical variability study of random dopant fluctuation on gate-all-around inversion-mode silicon nanowire field-effect transistorsSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 106, no. 10, 2015-03-09

Article

1/f Noise Characteristics of Surface-Treated Normally-Off Al2O3/GaN MOSFETsSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 36, no. 3, page. 229 - 231, 2015-03

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