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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

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Showing results 71 to 90 of 890

Conference

Calculation of interface dipole at metal/organic interface using synchrotron radiation photoemission spectroscopy

제 18차 방사광 이용자 연구 발표회, 2006-11-16

이종람

Article

Catalytic role of Au in Ni/Au contact on GaN(0001)SCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 78, no. 24, page. 3773 - 3775, 2001-06-11

Article

Challenge beyond Graphene: Metal oxide/graphene/metal oxide electrodes for optoelectronic devicesSCIESCOPUS

ACS APPLIED MATERIALS & INTERFACES, vol. 8, no. 20, page. 12932 - 12939, 2016-05-25

Conference

Challenges towards high-efficienct OLEDs: Charge injection efficiency & light-out coupling

A-COE, 2010-11-03

Article

Change of interface dipole energy with interfacial layer thickness and O-2 plasma treatment in metal/organic interfaceSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 90, no. 18, 2007-04-30

Conference

Change of interface dipole energy with stoichiometry of copper oxide buffer layer in metal/organic interface

2010 MRS sping meeting, 2010-04-05

이종람

Conference

Change of microstructure and chemical bonding states at Pt/p-type GaN interface with annealing and its effects on contact resistivity

제 9회 한국반도체 학술대회, 2002-02-01

이종람

Conference

Change of secondary electron emission properties with microstructural evolution of MgO film during growth

Digest of Technical Papers - SID International Symposium 39 (3), 2008-05-18

이종람

Article

Characteristics of Schottky contacts on n-type 4H-SiC using IrO2 and RuO2SCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 94, no. 9, page. 6159 - 6166, 2003-11-01

Conference

Characteristics of Semi-insulating GaN Layer Grown by Using Two-Step Growth Technique

제 10회 반도체 학술대회, 2003-02-01

이종람

Article

Characteristics of SiC pillar-shaped nanostructure Schottky diodeSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 106, no. 2, 2009-07-15

Article

CHARACTERIZATION AND REMOVAL OF SILICON SURFACE RESIDUE RESULTING FROM CHF3/C2F6 REACTIVE ION ETCHINGSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 76, no. 8, page. 4596 - 4602, 1994-10-15

Article

Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor depositionSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 80, no. 21, page. 3955 - 3957, 2002-05-27

Conference

Characterization of crystal polarity of GaN grown by metalorganic Chemical vapor deposition

2001 Fall Materials Research Symposium

이종람

Article

Characterization of inductively-coupled-plasma damage on n-type GaN using deep-level transient spectroscopy and synchrotron radiation photoemission spectroscopySCIESCOPUS

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol. 234, no. 3, page. 835 - 839, 2002-12

Conference

Characterization of point defects in impurity-doped GaAs by slow positrons

Trans Tech Publication, page. 1487 - 1490, 1992-01-01

이종람

Article

Charge Generation Mechanism of Metal Oxide Interconnection in Tandem Organic Light Emitting DiodesSCIESCOPUS

Journal of Physical Chemistry C, vol. 116, no. 10, page. 6427 - 6433, 2012-03-15

Article

Chemical Vapor Deposition of Graphene on a ""Peeled-Off"" Epitaxial Cu(111) Foil: A Simple Approach to Improved PropertiesSCIESCOPUS

ACS NANO, vol. 8, no. 8, page. 8636 - 8643, 2014-08

Conference

Co-implantation of Mn and N ions for high Tc ferromagnetism

ICNS-5, 2003-05-01

이종람

Article

CO-IMPLANTATION OF MN+ N INTO P-TYPE GAN FOR HIGH TC FERROMAGNETISM

PHYSICA STATUS SOLIDI C, no. 7, page. 2878 - 2881, 2003-11

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