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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

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Conference

Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentration

, 2012-08

Article

Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentrationSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 112, no. 3, 2012-08-01

Article

Electrical characteristics of 20-nm junctionless Si nanowire transistorsSCIESCOPUS

Solid State Electronics, vol. 73, page. 7 - 10, 2012-07

Article

High efficiency silicon solar cell based on asymmetric nanowireSCIESCOPUS

Scientific Reports, vol. 5, 2015-07-08

Article

Investigation of low-frequency noise behavior after hot-carrier stress in an n-channel junctionless nanowire MOSFETSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 33, no. 11, page. 1538 - 1540, 2012-11

Article

Optical and electrical characteristics of asymmetric nanowire solar cellsSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 111, no. 7, page. 73102, 2012-04-01

Article

Study on a Scaling Length Model for Tapered Tri-gate FinFET based on 3-D Simulation and Analytical AnalysisSCIESCOPUS

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 60, no. 9, page. 2721 - 2727, 2013-09

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