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Defect Curing Effects on High-k Gate Stack (Al/Al2O3/Si-sub) by Using H2 Plasma Treatment and Rapid Thermal Anneal
- Title
- Defect Curing Effects on High-k Gate Stack (Al/Al2O3/Si-sub) by Using H2 Plasma Treatment and Rapid Thermal Anneal
- Date Issued
- 2020-02-14
- Publisher
- 제 27회 반도체학술대회
- Article Type
- Conference
- Citation
- 제 27회 반도체학술대회, 2020-02-14
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Related Researcher
- 백록현BAEK, ROCK HYUN
- Dept of Electrical Enginrg