Unipolar resistive switching characteristic of semiconducting poly(o-anthranilic acid) film
SCIE
SCOPUS
- Title
- Unipolar resistive switching characteristic of semiconducting poly(o-anthranilic acid) film
- Authors
- Lee, D; Baek, S; Ree, M; Kim, O
- Date Issued
- 2008-04-24
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Abstract
- A resistive switching memory device was fabricated using poly (o-anthranilic acid) (PARA) film. The device has a metal/PARA/metal sandwich-like structure. When the device is biased with voltage beyond a critical value, it suddenly switches from a high resistive state to a low resistive state, with a difference in injection current of more than three orders of magnitude. By controlling the injection current level, it was possible to achieve non-volatile memory behaviour. The devices possess a prolonged retention time of 3 x 10(3) s after switching. The conduction mechanism in the off-state implies that the resistive switching of the device can be explained in terms of. lament theory.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22780
- DOI
- 10.1049/E1:20080326
- ISSN
- 0013-5194
- Article Type
- Article
- Citation
- ELECTRONICS LETTERS, vol. 44, no. 9, page. 596 - 597, 2008-04-24
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