DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ha, H | - |
dc.contributor.author | Kim, O | - |
dc.date.accessioned | 2016-04-01T02:41:47Z | - |
dc.date.available | 2016-04-01T02:41:47Z | - |
dc.date.created | 2010-11-24 | - |
dc.date.issued | 2010-04 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 2010-OAK-0000021963 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/25603 | - |
dc.description.abstract | The effect of various electrode materials has been studied for organic nonvolatile memory devices using a poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) thin film. The bottom electrodes (BEs) were indium tin oxide (ITO) and Al, while the top electrodes (TEs) were Al, Ti, Cr, ITO, Au, Ni, Pd, and Pt. The ITO/PEDOT:PSS/TE devices only had a bipolar switching behavior, while the Al/PEDOT:PSS/TE devices did not have any switching behavior unless a compliance current (CC) was used in the write-operation method. Then, they had a unipolar switching behavior irregardless of the TE material. Therefore, the BE material and the CC have crucial roles in the switching behavior and characteristics. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.subject | Switches | - |
dc.subject | Indium tin oxide | - |
dc.subject | Electrodes | - |
dc.subject | Nonvolatile memory | - |
dc.subject | Polymers | - |
dc.subject | Gold | - |
dc.subject | various electrode materials | - |
dc.subject | Compliance current (CC) | - |
dc.subject | nonvolatile memory devices | - |
dc.subject | poly(3 | - |
dc.subject | 4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin film | - |
dc.subject | THIN-FILMS | - |
dc.subject | POLYMER | - |
dc.title | Electrode-Material-Dependent Switching Characteristics of Organic Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) Film | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/LED.2010.2041182 | - |
dc.author.google | Ha, Heonjun | - |
dc.author.google | Kim, Ohyun | - |
dc.relation.volume | 31 | - |
dc.relation.issue | 4 | - |
dc.relation.startpage | 368 | - |
dc.relation.lastpage | 370 | - |
dc.contributor.id | 10087230 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.31, no.4, pp.368 - 370 | - |
dc.identifier.wosid | 000276017000037 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 370 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 368 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 31 | - |
dc.contributor.affiliatedAuthor | Kim, O | - |
dc.identifier.scopusid | 2-s2.0-77950092932 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 22 | - |
dc.description.scptc | 23 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Switches | - |
dc.subject.keywordAuthor | Indium tin oxide | - |
dc.subject.keywordAuthor | Electrodes | - |
dc.subject.keywordAuthor | Nonvolatile memory | - |
dc.subject.keywordAuthor | Polymers | - |
dc.subject.keywordAuthor | Gold | - |
dc.subject.keywordAuthor | various electrode materials | - |
dc.subject.keywordAuthor | Compliance current (CC) | - |
dc.subject.keywordAuthor | nonvolatile memory devices | - |
dc.subject.keywordAuthor | poly(3 | - |
dc.subject.keywordAuthor | 4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin film | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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