DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baek, RH | - |
dc.contributor.author | Kim, JS | - |
dc.contributor.author | Kim, DK | - |
dc.contributor.author | Kim, T | - |
dc.contributor.author | Kim, DH | - |
dc.date.accessioned | 2017-07-19T13:51:50Z | - |
dc.date.available | 2017-07-19T13:51:50Z | - |
dc.date.created | 2017-02-22 | - |
dc.date.issued | 2016-02 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/37755 | - |
dc.description.abstract | Injection velocity (v(inj)) is a unique figure-of-merit that determines logic transistor ON-current (ION) and switching delay (CV/I). This paper reports on Virtual-Source (VS) based analytical and physical model, which was calibrated by using state-of-the-art experimental data on III-V and Si tri-gate n-MOSFET, aiming to compare High-Performance (HP) logic transistor performance at 7 nm technology-node. We find that a significant increase in the virtual source injection velocity and improvement in the electrostatic integrity are critical, to meet the projected I-ON/I-OFF ratio for the 7 nm technology node. (C) 2015 Published by Elsevier Ltd. | - |
dc.language | English | - |
dc.publisher | Pergamon Press Ltd. | - |
dc.relation.isPartOf | SOLID-STATE ELECTRONICS | - |
dc.title | High-Performance Logic Transistor DC Benchmarking Toward 7 nm Technology-Node Between III-V and Si Tri-gate n-MOSFETs Using Virtual-Source Injection Velocity Model | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/J.SSE.2015.11.031 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.116, pp.100 - 103 | - |
dc.identifier.wosid | 000367542100017 | - |
dc.date.tcdate | 2018-03-23 | - |
dc.citation.endPage | 103 | - |
dc.citation.startPage | 100 | - |
dc.citation.title | SOLID-STATE ELECTRONICS | - |
dc.citation.volume | 116 | - |
dc.contributor.affiliatedAuthor | Baek, RH | - |
dc.identifier.scopusid | 2-s2.0-84950249639 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.scptc | 0 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Virtual-Source | - |
dc.subject.keywordAuthor | Injection velocity | - |
dc.subject.keywordAuthor | ITRS | - |
dc.subject.keywordAuthor | Logic | - |
dc.subject.keywordAuthor | InGaAs | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
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