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Showing results 1 to 30 of 31

Article

A Study of Flare Variation in Extreme Ultraviolet Lithography for Sub-22 nm Line and Space PatternSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 49, no. 6, 2010-01

Article

Characterization of fast relaxation by oxide-trapped charges under BTI stress on 64 nm HfSiON/SiO2 MOSFETsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 59, 2020-07

Article

Comparative Study between Atmospheric Microwave and Low-Frequency Plasmas: Production Efficiency of Reactive Species and Their EffectivenessSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 53, no. 5, 2014-05

Article

Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the Y-Function TechniqueSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 49, no. 4, page. 4DN06-01 - 4DN06-05, 2010-04

Article

Computer Design of Source/Drain Extension Region Profile and Spacer Length in Tri-Gate Body-Tied Fin Field-Effect Transistors with High-k Gate DielectricsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 49, no. 6, 2010-01

Article

Degradation process by effect of water molecules during negative bias temperature stress in amorphous-InGaZnO thin-film transistorSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 56, no. 10, 2017-10

Article

Driving Method Compensating for the Hysteresis of Polycrystalline Silicon Thin-Film Transistors for Active-Matrix Organic Light-Emitting Diode DisplaysSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, no. 5, 2009-05

Article

Effect of dynamic stress on off leakage of small-dimension pMOSFETs at high temperatureSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 53, no. 4, 2014-04

Article

Effect of Source/Drain Doping Gradient on Threshold Voltage Variation in Double-Gate Fin Field Effect Transistors as Determined by Discrete Random DopingSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 49, no. 10, 2010-01

Article

Effects of Geometrical Fin Parameters on Transfer Characteristics in Triple-Gate Fin Field Effect TransistorsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, no. 6, 2009-06

Article

Electrical characteristics of tunneling field-effect transistors with asymmetric channel thicknessSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 56, no. 2, page. 024201-1 - 024201-5, 2017-01

Article

Embedded Touch Sensing Circuit Using Mutual Capacitance for Active-Matrix Organic Light-Emitting Diode DisplaySCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 50, no. 3, 2011-03

Article

Extraction of source/drain resistivity parameters optimized for double-gate FinFETsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 54, no. 4, 2015-04

Article

Impact of geometrical parameters on the electrical performance of network-channel polycrystalline silicon thin-film transistorsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 57, no. 10, 2018-10

Article

Impact of Spacer Dielectric Constant on Parasitic RC and Design Guidelines to Optimize DC/AC Performance in 10 nm Node Si-Nanowire FETsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 54, no. 4, page. 4DN08-1 - 4DN08-5, 2015-04

Article

Improvement of switching uniformity in HfOx-based resistive random access memory with a titanium film and effects of titanium on resistive switching behaviorsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 53, no. 6, 2014-06

Article

Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 55, no. 8, 2016-08

Article

Modified Two-Dimensional Soft Output Viterbi Algorithm with Two-Dimensional Partial Response Target for Holographic Data StorageSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 51, no. 8, 2012-08

Article

Nonvolatile Resistive Memory Device Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin Film for Transparent and Flexible ApplicationsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 50, no. 6, page. 6GF01, 2011-06

Article

Novel Digital Driving Method Using Dual Scan for Active Matrix Organic Light-Emitting Diode DisplaysSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 47, no. 11, page. 8275 - 8278, 2008-11

Article

Novel resistance switching devices based on sub-10 nm polymer thin filmSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 47, no. 7, page. 5665 - 5667, 2008-07

Article

Physical DC and Thermal Noise Models of 18 nm Double-Gate Junctionless pMOSFETs for Low Noise RF ApplicationsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 54, no. 4, page. 4DC08-1 - 4DC08-6, 2015-04

Article

Saturation of threshold-voltage shift during positive bias temperature instability in HfSiON/SiO2 n-channel MOSFET and its effect on device lifetime evaluationSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 53, no. 8, page. 10 - 13, 2014-08

Article

Simplified Model of the Effect of Source/Drain Doping Gradient on Capacitance and Resistance in a Double-Gate Metal-Oxide-Semiconductor Field-Effect TransistorSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 50, no. 6, page. 6GF16, 2011-06

Article

System Identification Using Embedded Dynamic Signal AnalyzerSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 51, no. 8, 2012-08

Article

Threshold voltage variation depending on single grain boundary and stored charges in an adjacent cell for vertical silicon-oxide-nitride-oxide-silicon (SONOS) NAND flash memorySCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 57, no. 4S, 2018-04

Article

Two-Dimensional Soft Output Viterbi Algorithm with a Variable Reliability Factor for Holographic Data StorageSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 52, no. 9, 2013-09

Article

Unipolar Memory Operation of Resistance Random-Access Memory Using Compliance Current ControllerSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, no. 4, page. 4C161, 2009-04

Article

Unipolar Resistance Switching in Polymeric Resistance Random Access MemoriesSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, no. 6, 2009-06

Article

Unipolar Switching Characteristics of Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin FilmsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, no. 4, page. 4C169, 2009-04

Ha, H;
Kim, O

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