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Browsing "Department of Electrical Engineering (전자전기공학과)" by JournalJapanese Journal of Applied Physics

전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

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Showing results 1 to 6 of 6

Article

Effect of La2O3 Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate StacksSCIESCOPUS

Japanese Journal of Applied Physics, vol. 51, no. 2, 2012-02

Article

Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal--Oxide--Semiconductor Inverter at Elevated TemperatureSCIESCOPUS

Japanese Journal of Applied Physics, vol. 51, no. 2, 2012-02

Article

Improved Degradation and Recovery Characteristics of SiGe p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors under Negative-Bias Temperature StressSCIESCOPUS

Japanese Journal of Applied Physics, vol. 52, no. 4, page. 4CC21-1 - 4CC21-4, 2013-04

Article

Method of estimating mechanical stress on Si body of MOSFET using drain-body junction currentSCIESCOPUS

Japanese Journal of Applied Physics, vol. 56, no. 1, 2016-11

Article

Process optimization for synthesis of high-quality graphene films by low-pressure chemical vapor depositionSCIESCOPUS

Japanese Journal of Applied Physics, vol. 51, no. 6, page. 6FD21-1 - 6FD21-4, 2012-06

Article

Ultrahigh-quality-factor superconducting microwave resonator on diamond for quantum information processingSCIE

Japanese Journal of Applied Physics, vol. 58, no. 10, 2019-10-01

Lee, Moonjoo

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