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Article

Novel Digital Driving Method Using Dual Scan for Active Matrix Organic Light-Emitting Diode DisplaysSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 47, no. 11, page. 8275 - 8278, 2008-11

Article

Novel resistance switching devices based on sub-10 nm polymer thin filmSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 47, no. 7, page. 5665 - 5667, 2008-07

Article

Computer Design of Source/Drain Extension Region Profile and Spacer Length in Tri-Gate Body-Tied Fin Field-Effect Transistors with High-k Gate DielectricsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 49, no. 6, 2010-01

Article

Unipolar Switching Characteristics of Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin FilmsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, no. 4, page. 4C169, 2009-04

Ha, H;
Kim, O

Article

Extraction of source/drain resistivity parameters optimized for double-gate FinFETsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 54, no. 4, 2015-04

Article

Improvement of switching uniformity in HfOx-based resistive random access memory with a titanium film and effects of titanium on resistive switching behaviorsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 53, no. 6, 2014-06

Article

Saturation of threshold-voltage shift during positive bias temperature instability in HfSiON/SiO2 n-channel MOSFET and its effect on device lifetime evaluationSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 53, no. 8, page. 10 - 13, 2014-08

Article

Effect of dynamic stress on off leakage of small-dimension pMOSFETs at high temperatureSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 53, no. 4, 2014-04

Article

Two-Dimensional Soft Output Viterbi Algorithm with a Variable Reliability Factor for Holographic Data StorageSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 52, no. 9, 2013-09

Article

Unipolar Memory Operation of Resistance Random-Access Memory Using Compliance Current ControllerSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, no. 4, page. 4C161, 2009-04

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