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Sub-100 nm InGaAs Quantum-Well (QW) MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for Low-Power Logic Applications
- Title
- Sub-100 nm InGaAs Quantum-Well (QW) MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for Low-Power Logic Applications
- Authors
- 백록현; 김태우; 김대현; 고동휘; 권혁민; D.Veksler; C.Huffman; K.Matthews; S.Oktyabrsky; A.Greene; Y.Ohsawa; A.Ko; H.Nakajima; M.Takahashi; T.Nishizuka; H.Ohtake; S.K.Banerjee; 신승헌; 고대홍; 강창용; D.Gilmer; R.J.W.Hill; W.Maszara; C.Hobbs; P.D.Kirsch
- Date Issued
- 2013-12-09
- Publisher
- IEEE
- Article Type
- Conference
- Citation
- IEEE International Electron Devices Meeting, 2013-12-09
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Related Researcher
- 백록현BAEK, ROCK HYUN
- Dept of Electrical Enginrg