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dc.contributor.author백록현-
dc.contributor.author최길복-
dc.contributor.author사공현철-
dc.contributor.author이경택-
dc.contributor.author박민상-
dc.contributor.author최현식-
dc.contributor.author송승현-
dc.contributor.author박찬훈-
dc.contributor.author이상현-
dc.contributor.author이정수-
dc.contributor.author강창용-
dc.contributor.authorH.-H.Tseng-
dc.contributor.authorR.Jammy-
dc.contributor.author정윤하-
dc.date.accessioned2018-05-24T11:24:55Z-
dc.date.available2018-05-24T11:24:55Z-
dc.date.created2017-02-23-
dc.date.issued2009-12-07-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/49485-
dc.publisherIEEE-
dc.relation.isPartOfIEEE International Electron Devices Meeting-
dc.relation.isPartOfELECTRON DEVICES MEETING (IEDM), 2009 IEEE INTERNATIONAL-
dc.titleImpact of Dipole-induced Dielectric Relaxation on High-frequency Performance in La-incorporated HfSiON/Metal Gate nMOSFET-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationIEEE International Electron Devices Meeting-
dc.citation.conferencePlaceUS-
dc.citation.titleIEEE International Electron Devices Meeting-
dc.contributor.affiliatedAuthor백록현-
dc.description.journalClass1-
dc.description.journalClass1-

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백록현BAEK, ROCK HYUN
Dept of Electrical Enginrg
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