DC Field | Value | Language |
---|---|---|
dc.contributor.author | 백록현 | - |
dc.contributor.author | 최길복 | - |
dc.contributor.author | 사공현철 | - |
dc.contributor.author | 이경택 | - |
dc.contributor.author | 박민상 | - |
dc.contributor.author | 최현식 | - |
dc.contributor.author | 송승현 | - |
dc.contributor.author | 박찬훈 | - |
dc.contributor.author | 이상현 | - |
dc.contributor.author | 이정수 | - |
dc.contributor.author | 강창용 | - |
dc.contributor.author | H.-H.Tseng | - |
dc.contributor.author | R.Jammy | - |
dc.contributor.author | 정윤하 | - |
dc.date.accessioned | 2018-05-24T11:24:55Z | - |
dc.date.available | 2018-05-24T11:24:55Z | - |
dc.date.created | 2017-02-23 | - |
dc.date.issued | 2009-12-07 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/49485 | - |
dc.publisher | IEEE | - |
dc.relation.isPartOf | IEEE International Electron Devices Meeting | - |
dc.relation.isPartOf | ELECTRON DEVICES MEETING (IEDM), 2009 IEEE INTERNATIONAL | - |
dc.title | Impact of Dipole-induced Dielectric Relaxation on High-frequency Performance in La-incorporated HfSiON/Metal Gate nMOSFET | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.identifier.bibliographicCitation | IEEE International Electron Devices Meeting | - |
dc.citation.conferencePlace | US | - |
dc.citation.title | IEEE International Electron Devices Meeting | - |
dc.contributor.affiliatedAuthor | 백록현 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
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