Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
SCIE
SCOPUS
- Title
- Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
- Authors
- Maeng, WJ; Kim, WH; Koo, JH; Lim, SJ; Lee, CS; Lee, T; Kim, H
- Date Issued
- 2010-02-22
- Publisher
- AMER INST PHYSICS
- Abstract
- Titanium oxide (TiO2) layer was used to control the flatband voltage (V-FB) of p-type metal-oxide-semiconductor field effect transistors. TiO2 was deposited by plasma enhanced atomic layer deposition (PE-ALD) on hafnium oxide (HfO2) gate dielectrics. Comparative studies between TiO2 and Al2O3 as capping layer have shown that improved device properties with lower capacitance equivalent thickness (CET), interface state density (D-it), and flatband voltage (V-FB) shift were achieved by PE-ALD TiO2 capping layer.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9711
- DOI
- 10.1063/1.3330929
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 96, no. 8, 2010-02-22
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