Bottom oxide Bulk FinFETs Without Punch-Through-Stopper for Extending Toward 5-nm Node

Abstract

Structural advancements of 5-nm node bulk fin-shaped field-effect transistors (FinFETs) without punch-through-stopper (PTS) were introduced using fully calibrated TCAD for the first time. It is challenging to scale down conventional bulk FinFETs into 5-nm technology node due to the sub-fin leakage increase. Meanwhile, bottom oxide deposition after anisotropic etching for source/drain (S/D) epi formation prevents the sub-fin leakage effectively even without the PTS doping, thus achieving better gate-to-channel controllability. Bottom oxide FinFETs also have smaller gate capacitances than do conventional FinFETs because the parasitic capacitances decrease by smaller S/D epi separated from the bottom Si layer, which reduces junction and outer-fringing capacitances. But smaller S/D epi decreases the stresses along the channel direction, and the effective widths decrease by the bottom oxide layer blocking the current paths at the bottom side of fin channels. Furthermore, increase of the interconnect resistance and capacitance parasitics down to 5-nm node diminishes the improvements of total delays as the interconnect wire length increases greatly. In spite of these drawbacks, 5-nm node bottom oxide FinFETs achieve smaller total delays than do the 7-nm node conventional FinFETs, especially for low-power applications, thus promising for the scalability of bulk FinFETs along with simple and reliable process by avoiding PTS step.