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BAEK, ROCK HYUN(백록현) scopus

Department: Dept of Electrical Engineering(전자전기공학과)

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Publication & Time Cited Count (For the Last 5 years)

Results 41-49 of 49 (Search time: 0.002 seconds).

Article

Electrical characteristics of 20-nm junctionless Si nanowire transistorsSCIESCOPUS

Solid State Electronics, vol. 73, page. 7 - 10, 2012-07

Article

A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 Gate Stack nMOSFETsSCIESCOPUS

MICROELECTRONIC ENGINEERING, vol. 88, no. 12, page. 3411 - 3414, 2011-12

Article

Characterization and Modeling of 1/f Noise in Si-nanowire FETs: Effects of Cylindrical Geometry and Different Processing of OxidesSCIESCOPUS

IEEE TRANSACTIONS ON NANOTECHNOLOGY, vol. 10, no. 3, page. 417 - 423, 2011-05

Article

C-V Characteristics in Undoped Gate-All-Around Nanowire FET ArraySCIESCOPUS

IEEE Electron Device Letters, vol. 32, no. 2, page. 116 - 118, 2011-02

Article

Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the Y-Function TechniqueSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 49, no. 4, page. 4DN06-01 - 4DN06-05, 2010-04

Article

Characteristics of the Series Resistance Extracted From Si Nanowire FETs Using the Y-Function TechniqueSCIESCOPUS

IEEE TRANSACTIONS ON NANOTECHNOLOGY, vol. 9, no. 2, page. 212 - 217, 2010-03

Article

A new physical 1/f noise model for double stack high-k gate dielectric MOSFETsSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 30, no. 12, page. 1365 - 1367, 2009-12

Article

Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate DielectricSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 30, no. 5, page. 523 - 525, 2009-05

Article

Low-temperature performance of nanoscale MOSFET for deep-space RF applicationsSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 29, no. 7, page. 775 - 777, 2008-07

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