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Results 1-8 of 8 (Search time: 0.002 seconds).

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Subject : MODEL

Article

A drain extended FinFET with enhanced DC/RF performance for high-voltage RF applicationsSCIESCOPUS

Semiconductor Science and Technology, vol. 37, no. 11, 2022-11

Article

Highly Reliable Memory Operation of High-Density Three-Terminal Thyristor Random Access MemorySCIESCOPUS

Nanoscale Research Letters, vol. 17, no. 28, 2022-01

Article

High-Voltage Drain-Extended FinFET With a High-k Dielectric Field PlateSCIESCOPUS

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 67, no. 3, page. 1077 - 1084, 2020-02

Article

LaF3 electrolyte-insulator-semiconductor sensor for detecting fluoride ionsSCIESCOPUS

Sensors and Actuators, B: Chemical, vol. 279, page. 183 - 188, 2019-01

Article

Performance and Variations Induced by Single Interface Trap of Nanowire FETs at 7-nm NodeSCIESCOPUS

IEEE Transaction on Electron Devices, vol. 64, no. 2, page. 339 - 345, 2017-02

Article

Junction Design Strategy for Si Bulk FinFETs for System-on-Chip Applications Down to the 7-nm NodeSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 36, no. 10, page. 994 - 996, 2015-10

Article

A 3-D Statistical Simulation Study of Mobility Fluctuations in MOSFET Induced by Discrete Trapped Charges in SiO2 LayerSCIESCOPUS

IEEE TRANSACTIONS ON NANOTECHNOLOGY, vol. 10, no. 4, page. 699 - 705, 2011-07

Article

An Analysis of the Field Dependence of Interface Trap Generation under Negative Bias Temperature Instability Stress using Wentzel- Kramers Brillouin with Density Gradient MethodSCIESCOPUS

Japanese Journal of Applied Physics, vol. 50, no. 1, 2011-01

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