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JEONG, YOON HA(정윤하)

Department: Dept of Electrical Engineering(전자전기공학과)

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Publication & Time Cited Count (For the Last 5 years)

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Date Issued : [2010 TO 2016] Date Issued : 2010

Article

A HIGHLY EFFICIENT THREE-STAGE DOHERTY POWER AMPLIFIER WITH FLAT GAIN FOR WCDMA APPLICATIONSSCIESCOPUS

JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS, vol. 24, no. 17-18, page. 2537 - 2545, 2010-11

Article

The Effect of a Si Capping Layer on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETsSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 31, no. 10, page. 1104 - 1106, 2010-10

Article

Failure Analysis of Si Nanowire Field-Effect Transistors Subject to Electrostatic Discharge StressesSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 31, no. 9, page. 915 - 917, 2010-09

Article

ANALOG PREDISTORTION LINEARIZATION OF DOHERTY POWER AMPLIFIERS USING BANDWIDTH REDUCTION OF ERROR SIGNALSCIESCOPUS

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 52, no. 6, page. 1313 - 1316, 2010-06

Article

Light scattering with oxide nanocrystallite aggregates for dye-sensitized solar cell applicationSCIESCOPUS

JOURNAL OF NANOPHOTONICS, vol. 4, page. 41540, 2010-05-06

Article

Analysis of Contact Effects in Inverted-Staggered Organic Thin-Film Transistors Based on Anisotropic ConductionSCIESCOPUS

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 57, no. 5, page. 986 - 994, 2010-05

Article

Investigation of Sub-10-nm Diameter, Gate-All-Around Nanowire Field-Effect Transistors for Electrostatic Discharge ApplicationsSCIESCOPUS

IEEE TRANSACTIONS ON NANOTECHNOLOGY, vol. 9, no. 3, page. 352 - 354, 2010-05

Article

Effects of Lithium Ions on Dye-Sensitized ZnO Aggregate Solar CellsSCIESCOPUS

CHEMISTRY OF MATERIALS, vol. 22, no. 8, page. 2427 - 2433, 2010-04-27

Article

Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the Y-Function TechniqueSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 49, no. 4, page. 4DN06-01 - 4DN06-05, 2010-04

Article

Characteristics of the Series Resistance Extracted From Si Nanowire FETs Using the Y-Function TechniqueSCIESCOPUS

IEEE TRANSACTIONS ON NANOTECHNOLOGY, vol. 9, no. 2, page. 212 - 217, 2010-03

Article

HIGHLY LINEAR ANALOG PREDISTORTION POWER AMPLIFIER WITH LOW MEMORY EFFECTS AT HIGH DRAIN BIAS VOLTAGESCIESCOPUS

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 52, no. 2, page. 295 - 299, 2010-02

Article

A WIDEBAND DIGITAL PREDISTORTION FOR HIGHLY LINEAR AND EFFICIENT GaN HEMT DOHERTY POWER AMPLIFIERSCIESCOPUS

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 52, no. 2, page. 484 - 487, 2010-02

Article

A High-Linearity Wideband Power Amplifier With Cascaded Third-Order Analog PredistortersSCIESCOPUS

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, vol. 20, no. 2, page. 112 - 114, 2010-02

Article

Thirty-five-nm T-Gate In0.52Al0.48As/In0.53Ga0.47As Metamorphic HEMTs with an Ultrahigh f(max) of 610 GHzSCIESCOPUSKCI

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 56, no. 1, page. 133 - 136, 2010-01

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