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KANG, BONG KOO(강봉구)

Department: Dept of Electrical Engineering(전자전기공학과)

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Publication & Time Cited Count (For the Last 5 years)

Results 1-7 of 7 (Search time: 0.001 seconds).

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Subject : MOSFET

Article

Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stressSCIESCOPUS

MICROELECTRONICS RELIABILITY, vol. 88-90, page. 186 - 190, 2018-09

Article

Effect of dynamic stress on off leakage of small-dimension pMOSFETs at high temperatureSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 53, no. 4, 2014-04

Article

Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFETSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 33, no. 2, page. 137 - 139, 2012-02

Article

Experimental Method to Extract Effective Channel Length of Nanoscale n-MOSFETsSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 30, no. 11, page. 1191 - 1193, 2009-11

Article

Method of extracting effective channel length for nano-scale n-MOSFETsSCIESCOPUS

SOLID-STATE ELECTRONICS, vol. 53, no. 10, page. 1076 - 1085, 2009-10

Article

Recovery of negative bias temperature instability induced degradation of p-MOSFETs with SiON gate dielectricSCIESCOPUS

MICROELECTRONIC ENGINEERING, vol. 85, no. 9, page. 1932 - 1936, 2008-09

Article

Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETsSCIESCOPUS

MICROELECTRONIC ENGINEERING, vol. 85, no. 8, page. 1820 - 1825, 2008-08

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